BERNARD A. WEINSTEIN

9/87 - present		Professor of Physics, Physics Department, SUNY at Buffalo, Buffalo NY
7/99 - 8/00		Sabbatical Research Fellow, Physics Department, Univ. of Surrey, England
6/78 - 9/87		Research Scientist, Electronic Materials Lab., Xerox Corp., Rochester, NY
9/75 - 5/78		Assistant Professor,Physics Department, Purdue University, W. Lafayette, IN
9/73 -8/75		NRC Postdoctoral Fellow, Materials Div., National Bureau Standards, MD.
9/71 - 9/73		Doctorand, Max Planck Inst. fur Festkorperforschung, Stuttgart, Germany

Honors and Awards

2003		Milton Plesur Award for Excellence in Teaching,SUNY at Buffalo
2000		Chancellor's Award for Excellence in Teaching, SUNY at Buffalo
1997		Fellow of Am. Phys. Soc.. Div. of Cond. Matter Physics "for applications of the diamond cell
		and studies of pressure on vibrational, optical & phase-transition phenomena in semicond."

Fields of Research: High-pressure and optical properties of semiconductors; solid-solid phase transitions; diamond-anvil cells; heterostructures; defects; impurities

Publications: (114 total articles in prominent journals, books, and conference proceedings, 1 US Patent granted)

CAPSULE HISTORY - Bernard A. Weinstein

Bernard A. Weinstein (Professor of Physics) received a B.S. in Physics at the University of Rochester and a Ph.D. at Brown, carrying out his research at the Max-Planck-Institute fur Festkorperforschung in Stuttgart, Germany. He was appointed a Postdoctoral Fellow at the National Bureau of Standards in 1973 and an Assistant Professor of Physics at Purdue University in 1975. He was a member of the research staff of the Xerox Research Laboratories in Rochester, New York from 1978 to 1987. At that time he came to the State University of New York at Buffalo, where he currently is engaged in teaching and research.

Professor Weinstein has been invited to lecture at numerous international conferences and workshops, and is a Fellow of the American Physical Society in the Division of Condensed Matter Physics. He has published widely on his research (114 articles), including 6 invited reviews and a chapter in the Springer-Verlag series on Light Scattering in Solids. He has Chaired and co-edited the Proceedings of the 6th Intl. Conf. on High Pressure Semiconductor Physics, and has Co-chaired the 11^th Conf. in this series. He was awarded the 1999-2000 SUNY Chancellor's Award and the 2002-03 Milton Plesur Award, both for "Excellence in Teaching".

Professor Weinstein's research interests are in experimental studies of the optical and high-pressure properties of intrinsic and defect states in solids. This includes: Raman, photoluminescence, and other visible/infrared spectroscopies of vibrational and electronic excitations in tetrahedral semiconductors - particulary III-V and II-VI crystals, alloys, nanostructures, and amorphous systems; diamond-anvil cell probes of the pressure (strain) dependence of these excitations; studies of band offsets, interface-strain, and dislocations in heterostructures; and investigation of solid-solid phase transitions in bulk crystals, superlattices, and nanoparticles. His research has been supported by major financial grants from the National Science Foundation, Office of Naval Research, Xerox Corporation, and New York State.

During the last twenty five years Professor Weinstein has made significant contributions in the field of high-pressure optical properties of semiconductor systems. He pioneered the use of the modern diamond-anvil-cell for Raman scattering and other optical spectroscopies, and his paper describing the initial Raman work with this device has been cited over 100 times in the Science Citation Index. His subsequent Raman studies led to an understanding of the effects of pressure on the optic- and acoustic- phonon dispersion in common semiconductors. He has also helped to advance cryogenic high-pressure research, developing convenient tunable diamond-anvil cells for Raman scattering, luminescence and, most recently, for far infrared magnetospectroscopy. His research on heterostructures under pressure has resulted in the discovery of novel layer phase transitions, exhibiting superpressing phenomena that can be related to the growth (at 1 atm.) of metastable strained-layer epitaxial systems.

Professor Weinstein's current research interests include studies of semiconductor impurity states exhibiting shallow-deep bistability, alloy bandstructure formation in the III-V-nitrogen system, the role of local-lattice relaxation in the nucleation and growth of high-pressure structural phase transitions, phonon lifetime and anharmonicity in partially ionic semiconductors, and excitonic states in the organic semiconductor α-PTCDA.