Publications
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"Effect of crystal structure and dopant concentration on the
luminescence of Cr3+ in
Al2O3
nanocrystals", A. Patra, R. E. Tallman, and B. A. Weinstein,
Optical Materials 27,1396-1401(2005)
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"Effacts of high pressure on photoluminescence transitions of
excitons in α-PTCDA (perylene tetracarboxylic
dianhydride) crystals", R. E. Tallman, B.A. Weinstein,
A.DeSilva, H.P. Wagner, physica status solidi (b) 241,
No.14, 3334-3338(2004)
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"Pressure-Raman study of resonant TO(Γ )-two-phonon decay
processes in ZnS: Comparison of three isotope compositions,
R. E. Tallman, J. Serrano, A. Cantarero, N. Garro, R. Lauck,
T. M. Ritter, B.A. Weinstein, M. Cardona, physica status
solidi (b) 241,No.14, 3143-3148 (2004).
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"Infrared and Raman Spectroscopies of InP/II-VI Core-Shell
Nanoparticles", F. S. Manciu, R. E. Tallman, B. D. McCombe,
B. A. Weinstein, D. W. Lucey, Y. Sahoo, and P. N. Prasad,
Physica E 26, 14-18 (2004).
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"Pressure measurements of TO-phonon anharmonicity in isotopic ZnS",
R. E. Tallman, T. M. Ritter, B. A. Weinstein, A. Cantarero,
J. Serrano, R. Lauck, and M. Cardona, phys. stat. sol. (b) 241,
No. 3, 491-494 (2004).
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"Raman scattering in β -ZnS", J. Serrano, A. Cantarero,
M. Cardona, N. Garro, R. Lauck, R. E. Tallman, T. M. Ritter,
and B. A. Weinstein, Physical Review B69, 14301-12 (2004)
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"Pressure studies of conduction-band N-pair-state mixing in dilute
GaAs1-xNx
alloys", B. A. Weinstein, S.R. Stambach, T.M. Ritter, J.O. Maclean,
D.J Wallis, Physica E 20, 317-320(2004)
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"Evidence for selective de-localization of N-pair states in dilute
GaAs1-xNx",
B. A.Weinstein, S. R. Stambach, T. M. Ritter, J. O. Maclean,
D. J. Wallis, Phys Rev. B68, 35336-45 (2003)
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"Pressure and k⋅p studies of band parameters in dilute-N
GaInNAs/GaAs quantum wells", S. A. Choulis, T.J.C. Hosea,
S. Tomic, M. Kamal-Saadi, B. A. Weinstein, E. P. O'Reilly,
A. R. Adams, and P.J. Klar, phys. stat. sol. (b) 235, No. 2,
384-9 (2003).
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"Pressure and temperature dependence of Raman phonons in isotopic
γ-CuI", J. Serrano, M. Cardona, T. Ritter, B. A. Weinstein,
A. Rubio, C. Lin, Phys. Rev. B66, 245202-13 (2002)
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"Electronic structure of
InyGa1-yAs1-xNx/GaAs
multiple quantum wells in the dilute-N regime from pressure
and k.p studies", S.A. Choulis, T.J.C. Hosea, S. Tomic, M.
Kamal-Saadi, A. Adams, E. O'Reilly, P. Klar, B.A.
Weinstein, to Phys. Rev. B66, 165321-29 (2002).
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"Heterostructure interface effects on the far-infrared
magneto-optical spectra of InAs/GaSb quantum wells",
G. Comanescu, R.J. Wagner, B.D. McCombe, B.V. Shanabrook, B.R.
Bennett, S. Singh, J.G. Tischler, B.A. Weinstein, Physica E,
Vol. 13, 186-9 (2002).
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"Far-Infrared Spectroscopy of Quasi-2D Impurity States in
Semiconductor Nanostructures under High Hydrostatic Pressure",
B. A. Weinstein, J.G. Tischler, R.J. Chen, H.A. Nickel,
Z.X. Jiang and B.D. McCombe, in: Frontiers of High Pressure
Research: Application to Low-Dimensional Nove Electronic
Materials, NATO Science Series II. Math., Physics and
Chemistry - Vol. 48, (ed. by H. D. Hochheimer, B. Kuchta,
P. Dorhout, J. Yarger), Kluwer Academic Publishers, Dordrecht,
2001, pp. 303-319, invited review
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"Effects of Confinement on Coupling Between Nitrogen and Band
States in InGaAsN/GaAs Structures: Pressure and Temperature
Studies", S. Choulis, B.A. Weinstein, T. Hosea, M.
Kamal-Saadi, E. O'Reilly, A. Adams, W. Stolz, phys. stat.
sol. (b) 223, 151 (2001).
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"Resonant Donor Defect as Cause of Compensation in p-type ZnSe:
Photoluminescence under Hydrostatic Pressure", Igor
L. Kuskovsky, G. F. Neumark, J. G.Tischler, and B. A.
Weinstein, Phys. Rev. B, Rapid Commun., 63, 161201(R), (2001).
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"High-Pressure Studies of Semiconductors in the Far-Infrared:
Donor States in Quasi-2D", B.A. Weinstein, J. G. Tischler,
R.J. Chen, H. A. Nickel, B. D. McCombe, A. B. Dzyubenko and
A. Sivachenko, Acta Physica Polonica A, 98, 241-257 (2000),
invited review.
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"Hydrostatic Pressure Dependence of Negative-Donor-Ion Singlet and
Singlet-Like Bound Magnetoplasmon Transitions in Doped GaAs/AlGaAs
Quantum Wells", J. G. Tischler, H. A. Nickel, B. D. McCombe,
B. A. Weinstein, A.B. Dzyubenko and A. Yu. Sivachenko, Physica E 6,
177-181 (2000).
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"Spectroscopy of Charged Donors and Many-Electron Effects in
Semiconductor Quantum Wells", B. D. McCombe, Z. X. Jiang,
J. G. Tischler, B. A. Weinstein and P. Hawrylak, Acta Physica
Polonica A 96, 559-572 (1999).
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"Pressure Tuning of Competing Charged and Neutral Exciton States
in Quasi-2D Semiconductor Structures", J. G. Tischler,
B. A. Weinstein, and B. D. McCombe, phys. stat. sol. (b) 215, 263-267
(1999).
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"Pressure Tuning of Many-Electron Impurity Interactions in
Confined Structures", J. G. Tischler, S. Singh,
H. A. Nickel, G. S. Herold, Z. X. Jiang, B. D. McCombe and
B. A. Weinstein, phys. stat. sol. (b) 211, 131-136 (1999).
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"Pitfalls of Using Pressure to Assign the Luminescence of
Large-Lattice-Relaxation Defects", V. Iota and
B. A. Weinstein, phys. stat. sol. (b) 211, 91-104 (1999).
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"Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser
Diodes: Model Solid Theory Analysis of
Pressure-Photoluminescence Experiments", T.M. Ritter, B.A.
Weinstein, R. E. Viturro and D. P. Bour, phys. stat. sol. (b)
211, 869-883 (1999).
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"InGaN/GaN Quantum Wells Studied by High Pressure, Variable
Temperature and Excitation Power Spectroscopy" P. Perlin,
C. Kisielowski, V. Iota, B. A. Weinstein, L. Mattos,
J. Kruger, E. R. Weber, J. Yang, Appl. Phys. Letters 73,
2778-2780 (1998).
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"Effects of Pressure on the Zn-Vacancy in ZnSe: Essential Role of
Lattice Relaxation for a Basic C3v Defect", V. Iota and
B. A. Weinstein, Phys. Rev. Lett. 81, 4955-4958 (1998).
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"Cubic InN Inclusions: Proposed Explanation for the Small
Pressure-Shift Anomally of the Luminescence in InGaN-Based
Quantum Wells", B. A. Weinstein, P. Perlin, N. E.
Christensen, I. Gorczyca, V. Iota, T. Suski, P. Wisniewski,
M. Osinski and P. G. Elisev, Solid State Commun.106, 567-571
(1998).
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"Full-Spectrum Optically Detected Resonance (ODR) Spectroscopy of
GaAs/AlGaAs Quantum Wells", G.S. Herold, H.A. Nickel,
J.G. Tischler, B. A. Weinstein and B.D. McCombe, Physica E 2,
39-43 (1998).
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"Diamond-Anvil-Cell Assembly", by R. J.
Chen and B. A. Weinstein, (U.S. Patent application filed Nov. 15,
1995). Patent #5,693,345 granted Dec. 2, 1997.
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"Influence of Pressure on the Photoluminescence and
Electroluminescence of GaN/InGaN/AlGaN Quantum Wells", P. Perlin, V.
Iota, B. A. Weinstein, P. Wisniewski, T. Suski, M. Osinski and
P. G. Eliseev, Appl. Phys. Lett.70, 2993-2995 (1997).
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"Pressure Dependence of the Electron Effective Mass in GaAs up to
the 1s( )-1s(X) Crossover", Z. X. Jiang, R. J. Chen, J. G. Tischler,
B. A. Weinstein and B. D. McCombe, phys. stat. sol. (b) 198, 41-47
(1996).
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"Competition of Deep and Shallow Impurities in Wide-Gap II-VI
Semiconductors under Pressure", B. A. Weinstein, T. M. Ritter,
D. Strachan, M. Li, H. Luo, M. Tamargo and R. Park,
phys. stat. sol. (b) 198, 167-180 (1996).
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New Diamond-Anvil Cell Design for FIR Magneto-Spectroscopy
Featuring in situ Cryogenic Pressure Tuning", R. J. Chen ,
B.A. Weinstein, Rev. Sci. Instrum. 67, 2883-2889 (1996).
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"Emergence of Deep Levels in n-Type ZnSe Under Hydrostatic
Pressure", T. M. Ritter, B. A. Weinstein, R. M. Park and
M. C. Tamargo, Phys. Rev. Lett. 76, 964-967 (1996).
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"Luminescence of Deep Phosphorous and Arsenic Impurities in ZnSe
at High Pressure", M. Ming Li, D. J. Strachan, T. M. Ritter,
M. Tamargo and B.A. Weinstein, Phys. Rev. B50, 4385-4390
(1994).
"Relation Between Phase Stability and Mechanical Defects in
InGa(Al)As/GaAs and ZnSe/GaAs Heterostructures Under Pressure", T. M.
Ritter, B. A. Weinstein, H. M. Kim, C. R. Wie, K. Stair,
C. Choi-feng and M. Funato, J. Phys Chem. Solids 56, 607-613,
(1995)
"Beginnings and Connections", B. A. Weinstein, Phil. Mag. B, 70,
315-320 (1994). (Invited)
"Acceptor State Instabilities in ZnSe under Hydrostatic Pressure",
D.J. Strachan, M. Ming Li, M. C. Tamargo and B.A. Weinstein, J. of
Crystal Growth 138, 318-323 (1994).
"Strain Relaxation in Highly Mismatched Heterostructures under
High Pressure-Temperature Conditions", B. A. Weinstein, T. M. Ritter,
K. Stair, C. Choi-Feng, G. Devane, H. M. Kim, and C. R. Wie, in: High
Pressure Science and Technology, Part 1, (Proc. of the 14th Joint
APS/AIRAPT Intl. Conf.), APS Conf. Proc. 309, ed. by S.C. Schmidt,
J. W. Shaner, G.A. Samara, and M. Ross (AIP Press, New York, 1994),
pp. 581-584.
"Pressure-Induced Instabilities of Deep Acceptor States in ZnSe",
M. Ming Li, D.J Strachan, M. Tamargo, and B. A. Weinstein,
in: High Pressure Science and Technology, Part 1 (Proc. of
14th Joint APS/AIRAPT Intl. Conf.), APS Conf. Proc. 309,
ed. by S. Schmidt, J.W. Shaner, G.A. Samara, and M. Ross
(AIP Press, New York, 1994), pp. 597-600.
"Pressure-Induced Resonant Raman Scattering in an InxGa1-xAs/GaAs
Strained-Layer Superlattice", V. Lemos, C.K. Inoko, F. Cerdeira, T.
Ritter and B.A. Weinstein, Solid State Commun. 84, 1011-1013 (1992).
"Matrix-Mediated Synthesis of Nanocrystalline -Fe203: A New
Optically Transparent Magnetic Material", R.F. Ziolo, E.P. Giannelis,
B.A. Weinstein, M.P. O'Horo, B.N. Ganguly, V. Mehrotra, M.W. Russell,
and D.R. Huffman, Science 257, 219-223 (1992).
"Fourier Transform Spectroscopy at Diamond-Anvil-Cell Pressures",
S.N. Holmes, M. Li, B.A. Weinstein, and B.D. McCombe,
Jpn. J. Appl. Phys. 32 (Suppl. 32-1), 340-342 (1993).
"Heterostructure Stability: Connections Between High Pressure and
Epitaxial Growth", B.A. Weinstein, L. Cui, U.D.Venkateswaran,
Jpn. J. Appl. Phys. 32(Suppl 32-1), 107-11 (1993)
"Anomalies in the Pressure Response of the Raman Modes in
(211)-Oriented InxGa1-xAs/GaAs Strained-Layer Superlattices",
V. Lemos, T. Ritter, B.A. Weinstein, Appl. Phys. Lett. 61,
1417-1419 (1992).
"Phase Transitions in AlAs/GaAs Superlattices", U.D.
Venkateswaran, L.J. Cui, B.A. Weinstein, and F.A. Chambers,
in: Recent Trends in High Pressure Research (The Proc. of
the 13th AIRAPT Intl. Conf. on High Pressure Science and
Technology), ed. by A.K. Singh (Oxford and IBH Co. Ltd.,
New Delhi, 1992) pp. 38-40.
"Polymorphic Stability of AlAs/GaAs Superlattices at High
Pressure", L.J. Cui, U.D. Venkateswaran, B.A. Weinstein and
F.A. Chambers, Phys. Rev. B45, 9248-9265 (1992).
"Forward and Reverse High-Pressure Transitions in Bulk-like AlAs
and GaAs Epilayers", U.D. Venkateswaran, L.J. Cui, B.A. Weinstein and
F.A. Chambers, Phys. Rev. B45, 9237-9247 (1992).
"Highlights of the Round Table Discussion on High Pressure and
Semiconductors", B.A. Weinstein, in: Frontiers of High Pressure
Research (A NAT0 Workshop Proc.), NAT0 ASI Series B: Physics Vol. 286,
ed. by H.D. Hochheimer, R.D. Etters, (Plenum, N.Y., 1991),
pp. 377-381.
"Enhanced Stability of Heterostructures Under Pressure",
B.A. Weinstein, L.J. Cui, U.D. Venkateswaran, in: Frontiers of High
Pressure Research (A NAT0 Workshop Proc.), NAT0 ASI Series B: Physics
Vol. 286, ed. by H.D. Hochheimer, R.D. Etters, (Plenum, N.Y., 1991),
pp. 257-267.
"Influence of Pseudomorphic Constraints on the Pressure Response
of Semiconductor Heterostructures", L.J. Cui, U.D. Venkateswaran,
B.A. Weinstein, in: Frontiers of High Pressure Research (A NAT0
Workshop Proc.), NAT0 ASI Series B: Physics Vol. 286, ed. by
H.D. Hochheimer, R.D. Etters, (Plenum, N.Y., 1991), pp. 269-280.
"Metal Complexes of an o,o'-Dihydroxy Azo Dye: A Spectroscopic
Study", B.R. Hsieh, R.K. Crandal and B.A. Weinstein, Dyes and Pigments
17, 141-151 (1991).
"Mismatch-Tuning by Applied Pressure in ZnSe Epilayers:
Possibility for Mechanical Buffering", L.J. Cui, U.D. Venkateswaran,
B.A. Weinstein, and B.T. Jonker, Phys. Rev. B (Rapid Commun.) 44,
10949-10952 (1991).
"High-Pressure Far Infrared Magneto-optical and Luminescence
Studies of Electronic States of Impurity Donors--D(X) Centers--in High
Purity GaAs", J.E. Dmochowski, R.A. Stradling, P.D. Wand, S.N. Holmes,
M. Li, B.D. McCombe, and B.A. Weinstein, Semicond. Sci. Technol. 6,
476-482, (1991).
"Pressure-Raman Studies of Substrate-Generated Internal Strain in
Heterostructures", L.J. Cui, U.D. Venkateswaran, B.A. Weinstein and
F.A. Chambers, Semicond. Sci. and Technology 6, 469-475 (1991).
"Crystalline Metastable Phase in Pressure-Cycled Epitaxial GaAs",
U.D. Venkateswaran, L.J. Cui, B.A. Weinstein, F.A. Chambers,
Phys. Rev. B (Rapid Commun) 43, 1875 (1991).
"Comparison and Spatial Profiling of Strain in [001]- and
[111]-Oriented InxGa1-xAs/GaAs Superlattices from Raman and
X-ray Experiments," U.D. Venkateswaran, T. Burnett, L.J.
Cui, M. Li, B.A. Weinstein, H.M. Kim, C.R. Wie, K. Elcess,
C.G. Fonstad and C. Mailhiot, Phys. Rev. B42, 3100 (1990).
"Strain Mapping in [111]- and [001]- InGaAs/GaAs Superlattices",
U.D. Venkateswaran, L. Cui, M. Li, B. Weinstein, K. Elcess,
C. Fonstad C. Mailhiot, Appl. Phys. Lett. 56, 286(1990)
"Phase Transitions in 2D Semiconductor Systems", B.A. Weinstein,
Semicond. Science and Technology 4, 283 (1989).
"Stability in Superlattices under Pressure", B.A. Weinstein, in:
Advances in Semiconductors and Semiconductor Structures, (Proc. of the
1987 SPIE Conference on Quantum Well and Superlattice Physics), SPIE
Vol. 792, 66-76 (1987). (Invited.)
"Raman Scattering Studies of MOCVD Grown GaAs/AlAs Superlattices",
S.K. Hark, B.A. Weinstein and R.D. Burnham, J. Appl. Phys. 62, 1112
(1987).
"Phase Transitions in AlAs/GaAs Superlattices Under High
Pressure", B.A. Weinstein, S.K. Hark, R.D. Burnham and R.M. Martin,
Phys. Rev. Lett. 58, 781-785 (1987).
"Photoluminescence Properties of Modulation-Doped GaAs/AlGaAs
Multiple Quantum Wells under High Pressure", B.A. Weinstein,
S.K. Hark, C. Mailhiot and C.H. Perry, J. of Superlattices and
Microstructures 3, 273 (1987).
"Ruby Thermometer for the Cryobaric Diamond-Anvil Cell",
B.A. Weinstein, Rev. Sci. Instrum. 57, 910-913 (1986).
"Cryogenic-Pressure Response of Optical Transitions in Quantum
Well and Bulk GaAs: A Direct Comparative Study", B.A. Weinstein,
S.K. Hark and R.D. Burnham, J. Appl. Physics 58, 4662-4665 (1985).
"Cathodoluminescence Spectroscopy Studies of Laser-Annealed
Metal-Semiconductor Interfaces", L.J. Brillson, H. Richter, M. Slade,
B.A. Weinstein and Y. Shapira, J. Vac. Sci. Technol. A3(3), 1011-1015
(1985).
"Ultrafast Time-Resolved Photoluminescence: A Probe of Radiative
and Nonradiative Processes in Amorphous Tetrahedral and Chalcogenide
Semiconductors", T.E. Orlowski and B.A. Weinstein, Phil. Mag. B52,
1-8 (1985).
"Anomalous Luminescence Pressure-Dependence in c-As2S3, a-As2SeS2:
Native Defect Structure", B.A. Weinstein, in: The Physics of
Semiconductors, (The Proc. of the 17th Intl. Conf.) ed. by D.J. Chadi,
W.A. Harrison (Springer-Verlag, NY, 1985) pp. 905-908.
"Raman Scattering, Laser Annealing and Pressure-Optical Studies of
Ion Beam Deposited Amorphous Carbon Films", S.K. Hark,
M.A. Machonkin, F. Jansen, M.L. Slade and B.A. Weinstein,
in: Optical Effects in Amorphous Semiconductors, AIP Conf.
Series No. 120, ed. by S.G. Bishop and P.C. Taylor (AIP, NY,
1984) pp. 465-472.
"Picosecond Photoluminescence as a Probe of Band-Tail
Thermalization in a-Si:H", T.E. Orlowski, B.A. Weinstein, H. Scher,
in: Optical Effects in Amorphous Semiconductors, AIP Conf. Series
No. 120, ed. by S.G. Bishop and P.C.Taylor (AIP, NY, 1984) pp 163-169
"Reversible and Metastable Changes in the Raman Spectrum of GeS2
Glass Induced by Compression", B.A. Weinstein and M.L. Slade, in:
Optical Effects in Amorphous Semiconductors, AIP Conf. Series No. 120,
ed. by S.G. Bishop and P.C. Taylor (AIP, NY, 1984) pp. 457-64.
"Anomalous Pressure-Response of Luminescence in c-As2S3 and
a-As2SeS2: Consequences for Defect Structure in Chalcogenides",
B.A. Weinstein, Phil. Mag. B50, 709-729 (1984).
"Cryogenic-Pressure Luminescence Studies of Defect Structure in
Amorphous and Crystalline Chalcogenide Semiconductors",
B.A. Weinstein, in: Solid State Physics under Pressure, ed. by
S. Minomura (KTK, Tokyo, 1985) pp. 285-290. (Invited.)
"Pressure-Raman Effects in Covalent and Molecular Solids",
B.A. Weinstein and R. Zallen, in: Light Scattering in Solids IV,
Topics in Applied Physics, Vol. 54, ed. by M. Cardona, and
G. Guntherodt (Springer-Verlag, Berlin, 1984) pp. 463-527. (Invited.)
"Cryogenic-Pressure Studies of Semiconductor Luminescence",
B.A. Weinstein, in: High Pressure in Science and Technology Part III,
Materials Research Society Symposium Vol. 22, ed. by C. Homan,
R.K. MacCrone, E. Whalley (North-Holland, NY, 1984) pp 341-344.
"Picosecond Radiative and Nonradiative Processes in As2S3 Glass",
B.A. Weinstein, T.E. Orlowski, W.H. Knox and T.M. Nordlund, Physica
117&118B, 977-979 (1983).
"Charge Density Anomalies in Si and InSb Preceeding the High
Pressure Transition", D.R. Yoder-Short, R. Colella and B.A.
Weinstein, Physica 117&118B, 564-566 (1983).
"Picosecond Luminescence and Competing Nonradiative Processes in
As2S3 Glass", B.A. Weinstein, T.E. Orlowski, W.H. Knox, T.M. Nordlund
and G. Mourou, Phys. Rev. B26, 4777-4780 (1982).
"Valence-Electron Density in Silicon and InSb under High Pressure
by X-Ray Diffraction", D.R. Yoder-Short, R. Colella and
B.A. Weinstein, Phys. Rev. Lett. 49, 1438-1441 (1982).
"Picosecond Radiative and Nonradiative Recombination in Amorphous
As2S3", T.E. Orlowski and B.A. Weinstein, in: Picosecond Phenomena
III, Springer Series in Chemical Physics, Vol. 23, ed. by
K.B. Eisenthal, R.M. Hochstrasser, W. Kaiser, A. Laubereau
(Springer-Verlag, Berlin, 1982) pp. 395-398.
"Pressure-Optical Study of GeS2 Glasses and Crystals: Implications
for network Topology", B.A. Weinstein, R. Zallen, M.Slade,
J.C. Mikkelsen, Jr., Phys. Rev. B25, 781-792 (1982)
"Network Dimensionality of Amorphous GeS2: Optical High-Pressure
Experiments on a-GeS2, 2d-GeS2, and 3d-GeS2", R. Zallen,
B.A. Weinstein and M.L. Slade, Journal de Physique C4 42,
241-244 (1981).
"Photoelastic Trends for Amorphous and Crystalline Solids of
Differing Network Dimensionality", B.A. Weinstein, R. Zallen,
M.L. Slade and A. deLozanne, Phys. Rev. B24, 4652-4665 (1981).
"Influence of Compression on Radiative Recombination in a-Si:H",
B.A. Weinstein, in: Tetrahedrally Bonded Amorphous Semiconductors,
AIP Conf. Series No. 73, ed. by R.A. Street, D.K. Biegelsen,
J.C. Knights (AIP, NY, 1981) pp. 268-272.
"Pressure Effects on the Absorption Edge, Refractive Index, and
Raman Spectra of Crystalline and Amorphous As2S3", J.M. Besson,
J. Cernogora, M.L. Slade, B.A. Weinstein and R. Zallen, Physica
105B&C, 319-323 (1981).
"Anomalous Optical Response with Variation in Band Filling in
Linear Chain Conductors", B.A. Weinstein, M.L. Slade, A.J. Epstein and
J.S. Miller, Solid State Commun. 37, 643-646 (1981).
"Effect of High-Pressure on Radiative Recombination in
Hydrogenated Amorphous Silicon", B.A. Weinstein, Phys. Rev. B23,
787-793 (1981).
"The Effect of Pressure on the Optical Properties of As2S3 Glass",
B.A. Weinstein, R. Zallen and M.L. Slade, J. of Non-Crystalline Solids
35&36, 1255-1259 (1980).
"Detailed Photoluminescence Intensity and Lineshape Studies of
Doped a-As2Se3 Films", B.A. Weinstein, Phil. Mag. B41, 235-244 (1980).
"High-Pressure Phonon Dispersion of Zinc Chalcogenides and the
Metallic Transition", B.A. Weinstein, in: High Pressure Science and
Technology, Vol. 1, Proc. of the 6th AIRAPT Int'l. Conf., ed. by K.D.
Timmerhaus and M.S. Barber (Plenum, NY, 1979) pp. 141-151.
"Phonon Dispersion of Zinc Chalcogenides Under Extreme Pressure
and the Metallic Transformation", B.A. Weinstein, Solid State
Commun. 24, 595-8 (1977).
"Pressure Dependent Optical Phonon Anharmonicity in GaP",
B.A. Weinstein, Solid State Commun. 20, 999-1003 (1976).
"Very High Pressure Raman Scattering in ZnTe and the
Semiconductor-to-Metal Phase Transition in Tetrahedral
Semiconductors", B.A. Weinstein, in:Physics of Semiconductors,
Proc. of the 13th Int'l. Conf. on the Physics of Semiconductors,
ed. by F.G. Fumi (NorthHolland, Amsterdam, 1976) pp. 326-9.
"Raman Scattering and Phonon Dispersion in Si and GaP at Very High
Pressure", B.A. Weinstein and G.J. Piermarini, Phys. Rev. B12, 1172-86
(1975).
"First- and Second-Order Raman Scattering in GaP to 128 Kbar",
B.A. Weinstein and G.J. Piermarini, Phys. Lett. 48A, 14-16 (1974).
"Resonant First- and Second-Order Raman Scattering in GaP",
B.A. Weinstein and M. Cardona, J. de Physique 35, Colloque C3, 253
(1974).
"Resonant First- and Second-Order Raman Scattering in GaP",
B.A. Weinstein and M. Cardona, Phys. Rev. B8, 2795-2809 (1973).
"Effect of Hydrostatic Pressure on the Second-Order Raman Spectrum
of GaP", B.A. Weinstein, J.B. Renucci and M. Cardona, Solid State
Commun. 12, 473-9 (1973).
"Measurement and Comparative Analysis of the Second-Order Raman
spectra of the Alkaline-Earth Oxides with a NaCl Structure",
K.H. Rieder, B.A. Weinstein, M. Cardona and H. Bilz, Phys. Rev. B8,
4780-86 (1973).
"Second-Order Raman Spectrum of Germanium", B.A. Weinstein and
M. Cardona, Phys. Rev. B7, 2545-51 (1973).
"Two-Phonon Raman Spectra of Si and GaP", B.A. Weinstein and
M. Cardona, Solid State Commun. 10, 961-5 (1972).
"Effect of Uniaxial Stress on the Reststrahlen Spectrum of GaAs",
B.A. Weinstein and M. Cardona, Phys. Rev. B5, 3120-24 (1972).
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