Current research effort focuses on nanostructures based on III-V and II-VI
compound semiconductors grown by epitaxial techniques. The materials
studied have direct energy bandgaps and thus are suitable for photonic
applications (emitters, detectors, modulators). Of particular interest are
the wide-gap II-VI semiconductors, such as ZnSe, which for the last five
years have been used for the fabrication of lasers in the blue-green. A
variety of non-destructive optical techniques in the visible and near
infra-red is used: Reflectivity, absorption, photoluminescence, and Raman
spectroscopies. Electronic states, impurities, and vibrational modes are
investigated using these methods.
Current Projects
The formation of a two-dimensional electron gas in n-type modulation doped
ZnSe/ZnCdSe and ZnSe/ZnCdMnSe quantum well structures
The observation of type-I and type-II excitons in ZnTe/CdSe quantum wells
Internal transitions among excitons and donors in semiconductor
heterostructures using optically detected resonance (ODR)
Selected Publications
G. Kioseoglou, J. Haetty, H. C. Chang, H. Luo, A. Petrou, T. Schmiedel, and
P. Hawrylak. Magneto-luminescence study of n-type modulation doped
ZnSe/ZnCdSe quantum well structures. Phys. Rev. B 55:4628 (1997).
W. Y. Yu, S. Stoltz, A. Petrou, J. Warnock, and B. T. Jonker. Metastable
excitons in ZnSe/ZnFeSe quantum wells. Phys. Rev. B 56:6862 (1997).
J. Haetty, M. H. Na, H. C. Chang, H. Luo, and A. Petrou. Fabrication of
flexible monocrystalline ZnSe-based foils and membranes.
Appl. Phys. Lett. 69:1609 (1996).
M. S. Salib, H. A. Nickel, G. S. Herold, A. Petrou, B. D. McCombe, R. Chen,
K. K. Bajaj, and W. Schaff. Observation of internal transitions of confined
excitons in GaAs/AlGaAs quantum wells. Phys. Rev. Lett.77:1135
(1996).
S. T. Lee, J. Haetty, A. Petrou, P. Hawrylak, M. Dutta, J. Pamulapati,
P. G. Newman, and M. Taysing-Lara. Interband transitions in AlGaAs/AlAs
quantum well structures. Phys. Rev. B 53:12912 (1996).
