Dr. Steve Durbin

Photo of Associate Professor Steve Durbin  

Associate Professor, Ph.D. (1994)

Office: 343 Fronczak Hall,  (716) 645-1024
Lab: 140 Fronczak Hall,  (716) 645-6475
Email: sdurbin@buffalo.edu
link to personal website for more info

Education

  Ph.D. -- Purdue University, West Lafayette (1994)
M.S. -- Purdue University, West Lafayette (1989)
B.S. -- Purdue University, West Lafayette (1988)

Research Interests

  It's difficult to think of any aspect of modern life not touched in some fashion by semiconductor electronics, yet there remain many gaps in our understanding, especially with respect to relatively new materials with potential for not only enhanced performance but also new types of electronic devices. Of particular interest are semiconductors based on oxygen (for example, zinc oxide and indium oxide) and on nitrogen (for example, indium gallium nitride). Our ability to grow high quality crystals of these materials is still limited, and their optical and electronic properties are the object of intense interest.

My current research spans the study of optical and electrical properties of both bulk and epitaxially grown single crystals of these and closely related materials. As a general rule, they are not easily doped p-type, making formation of pn junction devices problematic. Recently, I have become interested in using Schottky contact technology as a platform for investigating the types of defects ultimately responsible for determining conductivity in these materials, and in using synchrotron radiation to explore structural and electronic properties of both as-grown and passivated surfaces. I also have an interest in the basic growth mechanisms involved in formation of epitaxial layers and self-assembling nanostructures.

One of the most enjoyable aspects of these projects is the opportunity to collaborate with people around the world, including but not limited to Martin Allen and Roger Reeves (University of Canterbury, New Zealand); Chris McConville and Tim Veal (University of Warwick, UK); Roy Clarke and Chris Schlepuetz (University of Michigan, USA); Holger von Wenckstern and Marius Grundmann (Universität Leipzig, Germany); Tom Myers (Texas State University); Masakazu Kobayashi (Waseda University, Japan); Joan Redwing and Suzanne Mohney (The Pennsylvania State University, USA); Ben Ruck and Joe Trodahl (Victoria University of Wellington, New Zealand); Andrew Preston and Kevin Smith (Boston University, USA); Kevin Webb (Purdue University, USA) and a large number of people here at Buffalo.

Selected Publications

  1. M.W. Allen, C.H. Swartz, T.H. Myers, T.D. Veal, C.F. McConville, and S.M. Durbin, "Bulk transport measurements in ZnO: The effect of surface electron layers," Physical Review B 81 (2010) 075211.
  2. I.L. Farrell, R. J. Reeves, A. R. H. Preston, B. M.Ludbrook, J. E. Downes, B. J. Ruck, and S. M. Durbin, "Tunable electrical and optical properties of hafnium nitride thin films," Applied Physics Letters 96 (2010) 071914.
  3. L.R. Bailey, T.D. Veal, C.E. Kendrick, S.M. Durbin and C.F. McConville, "Sulfur passivation of InN surface electron accumulation," Applied Physics Letters 95 (2009) 192111.
  4. B.M. Ludbrook, I.L. Farrell, M. Kuebel, B.J. Ruck, A.R.H. Preston, H.J. Trodahl, L. Ranno, R.J. Reeves and S.M. Durbin, "Growth and properties of epitaxial GdN," Journal of Applied Physics 106 (2009) 063910.
  5. P.D.C. King, T.D. Veal, C.E. Kendrick, L.R. Bailey, S.M. Durbin and C.F. McConville, "InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements," Physical Review B 78 (2008) 033308.