Dr. Bernard A. Weinstein

Photo of Professor B. A. Weinstein  

Professor, Ph.D. Brown (1974)

Office: 209 Fronczak Hall,  (716) 645-2017 ext. 153
Lab: 215, 217 Fronczak Hall,  (716) 645-2017 ext. 156, 157, 158
Email: phyberni@acsu.buffalo.edu
link to personal website for more info

Education

  Ph.D. -- Brown University (1974)
B.S. -- University of Rochester (1968)

Research Interests

 
  • High-pressure Raman studies of the harmonic and anharmonic properties of phonons in bulk and nanoparticle semiconductors
  • Effects of pressure/strain on resonant localized states in dilute III-V alloys containing nitrogen and other localized defects
  • Deep defect and impurity states in crystalline and disordered wide band gap semiconductors
  • Structural phase transitions and phase stability under pressure/strain of semiconductors in bulk, superlattice, and nanoparticle geometries
In general, my research interests involve experimental investigations of the high-pressure and optical properties of intrinsic and defect states in semiconductors. This includes studies of: vibrational properties -- especially phonon-phonon and electron-phonon interactions; electronically active quantum states in pure and defective crystals, and alloys; disorder-related phenomena; and crystalline phase transitions under high pressure. Graduate students in my group perform Raman scattering, photoluminescence, and other visible/infrared spectroscopies to probe these phenomena in bulk semiconductors, III-V and II-VI heterostructures having layer or nanoparticle geometries, and semiconductor alloys and glasses. Diamond-anvil pressure cells are used at room - and cryogenic-temperatures in many of our experiments, reaching pressures equivalent to those found halfway to the earth's center.

Selected Publications

  1. "Raman Scattering in β-ZnS", J. Serrano, A. Cantarero, M. Cardona, N. Garro, R. Lauck, R. E. Tallman, T. M. Ritter, and B. A. Weinstein, Phys. Rev. B (accepted Oct. 2003).
  2. Evidence for selective delocalization of N-pair states in dilute GaAs1-xNx B. A. Weinstein, S. R. Stambach, T. M. Ritter, J. O. Maclean and D. J. Wallis, Phys. Rev. B 68, 035336 (2003).
  3. Pressure and temperature dependence of the Raman phonons in isotopic γ-CuI J. Serrano, M. Cardona, T. M. Ritter, B. A. Weinstein, A. Rubio, and C. T. Lin, Phys. Rev. B 66, 245202 (2002).
  4. Electronic structure of InyAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k•p studies S. A. Choulis, T. J. C. Hosea, S. Tomic, M. Kamal-Saadi, A. R. Adams, E. P. O'Reilly, B. A. Weinstein, and P. J. Klar, Phys. Rev. B 66, 165321 (2002).
  5. Resonant donor defect as a cause of compensation in p-type ZnSe: Photoluminescence studies under hydrostatic pressure Igor L. Kuskovsky and G. F. Neumark, J. G. Tischler and B. A. Weinstein, Phys. Rev. B 63, 161201 (2001).